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| FFH30US30DN June 2003 FFH30US30DN 30A, 300V StealthTM Diode General Description The FFH30US30DN is a StealthTM diode optimized for low loss performance in output rectification. The StealthTM family exhibits low reverse recovery current (IRM(REC)), low VF and soft recovery under typical operating conditions. This device is intended for use as an output rectification diode in Telecom power supplies and other power switching applications. Lower VF and IRM(REC) reduces diode losses. Formerly developmental type TA49449. Features * Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 0.45 * Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 50ns * High Operating Temperature . . . . . . . . . . . . . . . . 175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V * Avalanche Energy Rating. . . . . . . . . . . . . . . . . . . .20mJ Applications * Switch Mode Power Supplies * Power Factor Correction * Uninterruptable Power Supplies * Motor Drives * Welders Package JEDEC STYLE 3 LEAD TO-247 ANODE 2 CATHODE ANODE 1 Symbol K CATHODE (BOTTOM SIDE METAL) A1 A2 Device Maximum Ratings (per leg) TC = 25C unless otherwise noted Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 160oC) Total Device Current (Both Legs) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528 Ratings 300 300 300 30 60 70 325 230 20 -55 to 175 300 260 Units V V V A A A A W mJ C C C CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. (c)2003 Fairchild Semiconductor Corporation FFH30US30DN Rev. A1 FFH30US30DN Package Marking and Ordering Information Device Marking 30US30DN Device FFH30US30DN Package TO-247 Tape Width N/A Quantity 30 Electrical Characteristics (per leg) TC = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics IR Instantaneous Reverse Current VR = 300V TC = 25C TC = 125C 100 1 A mA On State Characteristics VF Instantaneous Forward Voltage IF = 30A TC = 25C TC = 125C 0.93 0.8 1.0 0.87 V V Dynamic Characteristics CJ Junction Capacitance VR = 10V, IF = 0A 410 pF Switching Characteristics trr trr IRM(REC) QRR trr S IRM(REC) QRR trr S IRM(REC) QRR Reverse Recovery Time Reverse Recovery Time Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge Reverse Recovery Time Softness Factor (tb/ta) Maximum Reverse Recovery Current Reverse Recovered Charge IF = 1A, dIF/dt = 100A/s, VR = 15V IF = 30A, dIF/dt = 100A/s, VR = 15V IF = 30A, dIF/dt = 200A/s, VR = 195V, TC = 25C IF = 30A, dIF/dt = 200A/s, VR =195V, TC = 125C IF = 30A, dIF/dt = 1000A/s, VR =195V, TC = 125C 29 32 46 5.3 140 77 0.45 9 400 54 0.49 32 930 50 55 ns ns ns A nC ns A nC ns A nC Thermal Characteristics RJC RJA Thermal Resistance Junction to Case TO-247 0.65 30 C/W C/W Thermal Resistance Junction to Ambient TO-247 (c)2003 Fairchild Semiconductor Corporation FFH30US30DN Rev. A1 FFH30US30DN Typical Performance Curves (per leg) 60 1000 175oC IF, FORWARD CURRENT (A) 175oC 125oC IR, REVERSE CURRENT (A) 50 100 150oC 125oC 10 100oC 75oC 40 30 75oC 1 20 25oC 10 0.1 25oC 0 0.3 0.01 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 50 100 150 200 250 300 VF , FORWARD VOLTAGE (V) VR , REVERSE VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage 60 VR = 195V, TC = 125oC Figure 2. Reverse Current vs Reverse Voltage 70 VR = 195V, TC = 125oC 60 t, RECOVERY TIMES (ns) tb at IF = 60A, 30A, 15A 50 40 30 ta at IF = 60A, 30A, 15A 20 10 50 t, RECOVERY TIMES (ns) 40 tb at dIF/dt = 200A/s, 500A/s, 800A/s 30 20 10 ta at dIF/dt = 200A/s, 500A/s, 800A/s 0 0 10 20 30 40 50 60 0 0 200 400 600 800 1000 1200 IF , FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 3. ta and tb Curves vs Forward Current 35 30 25 dIF/dt = 800A/s 20 15 10 5 0 0 10 20 30 40 50 60 dIF/dt = 200A/s dIF/dt = 500A/s IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) VR = 195V, TC = 125oC 40 35 30 25 Figure 4. ta and tb Curves vs dIF /dt VR = 195V, TC = 125oC IF = 60A 20 IF = 30A 15 IF = 15A 10 5 200 400 600 800 1000 1200 IF , FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Maximum Reverse Recovery Current vs Forward Current Figure 6. Maximum Reverse Recovery Current vs dIF /dt (c)2003 Fairchild Semiconductor Corporation FFH30US30DN Rev. A1 FFH30US30DN Typical Performance Curves (per leg) (Continued) S, REVERSE RECOVERY SOFTNESS FACTOR 0.8 QRR, REVERSE RECOVERED CHARGE (C) VR = 195V, TC = 125oC 1.4 VR = 195V, TC = 125oC 0.7 1.2 0.6 IF = 60A, 30A, 15A 0.5 1.0 IF = 60A IF = 30A 0.6 IF = 15A 0.8 0.4 0.3 0.4 0.2 0 200 400 600 800 1000 1200 0.2 200 400 600 800 1000 1200 dIF /dt, CURRENT RATE OF CHANGE (A/s) dIF /dt, CURRENT RATE OF CHANGE (A/s) Figure 7. Reverse Recovery Softness Factor vs dIF /dt 1600 f = 1MHZ CJ , JUNCTION CAPACITANCE (pF) 1400 1200 1000 800 600 400 200 0 0.03 Figure 8. Reverse Recovery Charge vs dIF/dt IRM(REC) , MAX REVERSE RECOVERY CURRENT (A) -12 IF = 30A, VR = 195V, dIF /dt = 600A/usec -14 IRM(REC) -16 -18 -20 -22 -24 -26 -28 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) tRR 70 65 t, RECOVERY TIMES (ns) 60 55 50 45 40 35 30 175 0.1 1 10 100 VR , REVERSE VOLTAGE (V) Figure 9. Junction Capacitance vs Reverse Voltage Figure 10. Maximum Reverse Recovery Current and trr vs Case Temperature 35 IF(AV), AVERAGE FORWARD CURRENT (A) 30 25 20 15 10 5 0 158 160 162 164 166 168 170 (oC) 172 174 176 TC, CASE TEMPERATURE Figure 11. DC CURRENT DERATING CURVE (c)2003 Fairchild Semiconductor Corporation FFH30US30DN Rev. A1 FFH30US30DN Typical Performance Curves (per leg) (Continued) DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 1.0 THERMAL IMPEDANCE ZJA, NORMALIZED PDM 0.1 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 0.01 10-5 10-4 Figure 12. Normalized Maximum Transient Thermal Impedance Test Circuit and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE + MOSFET VDD 0 0.25 IRM IRM dIF dt ta trr tb VGE t1 t2 - Figure 13. trr Test Circuit Figure 14. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1 VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV VAVL IL IL t0 t1 t2 t Figure 15. Avalanche Energy Test Circuit Figure 16. Avalanche Current and Voltage Waveforms (c)2003 Fairchild Semiconductor Corporation FFH30US30DN Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
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